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Home > Products > Semiconductor Module Devices > Thyristor Module > 1600V High power thyristor assembly for phase control
1600V High power thyristor assembly for phase control
1600V High power thyristor assembly for phase control
1600V High power thyristor assembly for phase control
  • 1600V High power thyristor assembly for phase control
  • 1600V High power thyristor assembly for phase control
  • 1600V High power thyristor assembly for phase control

1600V High power thyristor assembly for phase control

    Unit Price: USD 230 - 310 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
    Min. Order: 1 Piece/Pieces
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Basic Info

Model No.YZPST-KP641-16E

BrandYZPST

V RRM1600v

V DRM1600v

I T(AV)641a

I TSM9900a

I RRM30ma

I DRM30ma

V TM1.5v

Threshold Voltage V T(TO)0.99v

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity100

TransportationOcean,Air

Place of OriginChina

Supply Ability1000

CertificateISO9000

HS Code85413000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

FOR PHASE CONTROL APPLICATIONS
Type: YZPST-KP641/16E

ELECTRICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Maximu

m Limits

Units

Conditions

Repetitive peak reverse voltage

RRM

1600

V

 

Repetitive peak off state voltage

DRM

1600

V

 

Average value of on-state current

I T(AV)

641

A

Sinewave,180 o conduction,T sink =70 

Peak one cycle surge

(non repetitive) current

TSM

9900

A

10.0 msec (50Hz), sinusoidal wave-shape,

180 conduction, T j = 125 

 

RRM

30

mA

Tj = 125 ℃

 

DRM

30

mA

Tj = 125 ℃

Peak on-state voltage

TM

1.5

V

Tj = 125 ℃ ITM=1000A

Threshold voltage

V T(TO)

0.99

V

T j =1 25 ℃

Slope resistance

T

0.52

T j =1 25 ℃

Average gate power dissipation

P G(AV)

3

W

 

Gate current

GT

300

mA

V D = 6 V;R L = 3 ohms;T j = +25 ℃

Gate voltage

GT

3.5

V

V D = 6 V;R L = 3 ohms;T j = 0-125 ℃

Latching current

I L

1000

mA

V D = 24 V; R L = 12 ohms

Holding current

I H

300

mA

V D = 24 V; I = 2.5 A

Critical rate of voltage rise

dV/dt

1000

V/s

VD=2/3VDRM

Critical rate of rise of on-state

current

di/dt

200

A/ s

Switching from V DRM 1000 V,

non-repetitive

Operating temperature

T

-30-125

 

Storage temperature

T stg

-30-125

 

 

 

 CASE OUTLINE AND DIMENSIONS.

YZPST-KP641-16E.jpg


Product Categories : Semiconductor Module Devices > Thyristor Module

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