| Unit Price: | USD 0.55 - 0.72 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
Download:
Basic Info
Model No.: YZPST-FW26025A
Brand: YZPST
Type: Intrinsic Semiconductor
Application: Radio
Batch Number: 2010+
VCBO: -100V
VCEO: -100V
VEBO: -5V
IC: -20A
Icm: -40A
IB: -0.5A
PC: 160W
TJ: 200℃
Tstg: -65~200℃
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000000
Certificate: ISO9001-2015,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
Silicon PNP Darlington Power Transistor
YZPST-FW26025A
Silicon PNP Darlington Power Transistor
DESCRIPTION
·High DC Current Gain-
: hFE = 5000(Min)@ IC= -2A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min)
·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
·Designed for linear and switching industrial equipment
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
|
SYMBOL |
PARAMETER |
VALUE |
UNIT |
|
VCBO |
Collector-Base Voltage |
-100 |
V |
|
VCEO |
Collector-Emitter Voltage |
-100 |
V |
|
VEBO |
Emitter-Base Voltage |
-5 |
V |
|
IC |
Collector Current-Continuous |
-20 |
A |
|
ICM |
Collector Current-Peak |
-40 |
A |
|
IB |
Base Current- Continuous |
-0.5 |
A |
|
PC | Collector Power Dissipation @TC=25℃ |
160 |
W |
|
Tj |
Junction Temperature |
200 | ℃ |
|
Tstg |
Storage Temperature Range |
-65~200 | ℃ |
THERMAL CHARACTERISTICS
|
SYMBOL |
PARAMETER |
MAX |
UNIT |
|
Rth j-c |
Thermal Resistance, Junction to Case |
1.09 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN |
TYP. |
MAX |
UNIT |
|
VCEO(SUS)* |
Collector-Emitter Sustaining Voltage |
IC= -100mA, IB= 0 |
-100 |
|
|
V |
|
VCE(sat)-1* |
Collector-Emitter Saturation Voltage |
IC= -10A ,IB= -40mA |
|
|
-2.0 |
V |
|
VCE(sat)-2* |
Collector-Emitter Saturation Voltage |
IC= -20A ,IB= -200mA |
|
|
-3.0 |
V |
|
VBE(sat)* |
Base-Emitter Saturation Voltage |
IC= -20A ,IB= -200mA |
|
|
-4 |
V |
|
V BE(on)* |
Base-Emitter On Voltage |
IC= -10A ; VCE= -3V |
|
|
-2.8 |
V |
|
ICEO |
Collector Cutoff current |
VCE= -50V, IB= 0 |
|
|
-1 |
mA |
|
ICEV |
Collector Cutoff current(VBE=-1.5V) | VCE= -100V, IB= 0 |
|
| -0.5 |
mA |
| VCE= -100V, IB= 0,Tc=150℃ | -5 | |||||
|
IEBO |
Emitter Cutoff Current |
VEB= -5V; IC= 0 |
|
|
-2 |
mA |
|
hFE-1* |
DC Current Gain |
IC= -2A ; VCE= -3V |
5000 |
|
|
|
|
hFE-2* |
DC Current Gain |
IC= -10A ; VCE= -3V |
750 |
|
18000 |
|
|
hFE-3* |
DC Current Gain |
IC= -30A ; VCE= -3V |
200 |
|
|
|
*:Pulse test:Pulse width=300us,duty cycle≤2%
Product Categories : Semiconductor Plastic Package > Silicon Transistor
Hot Products
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now