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Basic Info
Model No.: YZPST-2N6576
Brand: YZPST
Additional Info
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
NPN Silicon Power Darlington Transistors
YZPST-2N6576
Transistors of FEATURES: 1.High Gain Darlington Performance 2. Built-in Diode Protection for Reverse Polarity Protection
3. Can Be Driven from Low-Level Logic 4. Popular Voltage Range
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
| Parameter | Symbol | Value | Unit |
| Collector-Base Voltage | VCBO | 60 | V |
|
Collector-Emitter Voltage |
VCEO |
60 |
V |
| Emitter-Base Voltage | VEBO | 6.0 | V |
| Collector Current | IC | 15 | A |
| Base Current | IB | 0.5 | A |
| Total Dissipation at | Ptot | 120 | W |
|
Max. Operating Junction Temperature | Tj | 120 | oC |
|
Storage Temperature |
Tstg |
-55~150 |
oC |
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|
Collector Cut-off Current | ICEO |
VCE = 60V, IB = 0 |
- |
- |
1.0 |
mA |
| Collector Cut-off Current | ICBO | VCB = 60V, IE = 0 | - | - | 0.5 | mA |
|
Emitter Cut-off Current |
IEBO |
VEB = 5.0V, IC = 0 |
- |
- |
2.0 |
mA |
|
Collector-Emitter Sustaining Voltage |
VCEO |
IC = 30mA, IB = 0 |
60 |
- |
- |
V |
|
DC Current Gain |
hFE(1) |
VCE = 3.0V, IC = 4.0A |
2000 |
- |
- |
|
|
hFE(2) |
VCE = 3.0V, IC = 10A |
500 |
- |
- | ||
|
Collector-Emitter Saturation Voltage |
VCE(sat) |
IC = 10A, IB = 100mA |
- |
- |
2.5 |
V |
| IC = 15A, IB = 150mA |
- |
- | 4.0 | |||
|
Base-Emitter Saturation Voltage |
VBE(sat) |
IC = 10A, IB = 100mA |
- |
- |
3.5 |
V |
Product Categories : Semiconductor Plastic Package > Silicon Transistor
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